HGTG18N120BND |
RFQ for HGTG18N120BND Required Field |
 |
| Technical/Catalog Information | HGTG18N120BND |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 54A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 18A |
| Power - Max | 390W |
| Mounting Type | Through Hole |
| Package / Case | TO-247 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HGTG18N120BND HGTG18N120BND |
| Product | Manufacturers | Pack | D/C |
| HGTG18N120BND | - | TO-3P | 05+ |
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49304.
Features |
| • 54A, 1200V, TC= 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ= 150• Short Circuit Rating• Low Conduction Loss |
| Models | MFG | Pack |
| HGT193N60C3DS | ||
| HGT1N30N60A4D | TO | |
| HGT1N40N60A4D | TO | |
| HGT1S10N120BNS | ||
| HGT1S10N120BNST | ||
| HGT1S11N120CNS | ||
| HGT1S12N60A4DS | TO-263(D2PAK) | |
| HGT1S12N60A4S | ||
| HGT1S12N60A4S9A | TO-263(D2PAK) | |
| HGT1S12N60B3DS | ||
| HGT1S12N60B3S | ||
| HGT1S12N60C3 | TO | |
| HGT1S12N60C3DS | ||
| HGT1S12N60C3S | ||
| HGT1S14N36G3VL | ||
| HGT1S14N36G3VLS | TO-263 | |
| HGT1S14N36G3VLT | ||
| HGT1S14N37G3VLS | TO | |
| HGT1S14N40F3VLS | TO | |
| HGT1S14N41G3VLSR4874 |
